Iryna Levchenko | Semiconductor | Best Researcher Award

Dr.Iryna Levchenko , Institute of High Pressure Physics of Polish Academy of Science, Poland.

Dr.Iryna Levchenko is a detail-oriented Research Assistant based in Warsaw, Poland, specializing in III-V semiconductor chemical treatment and GaN laser diode development. With a Ph.D. in Inorganic Chemistry from V. Lashkaryov ISP NASU, she possesses a robust background in optoelectronics and semiconductor technology. Iryna excels in data analysis, laboratory work, and team collaboration, bringing creativity and independence to her research. Fluent in Ukrainian, Russian, English, and Polish, she effectively communicates complex scientific concepts. Iryna is dedicated to advancing her field through innovative research and has contributed to 17 publications in peer-reviewed journals.

Publication Profile

ORcid

Scopus

Suitability For The Award

Iryna Levchenko is an exemplary candidate for the Best Researcher Award, demonstrating a robust blend of academic credentials, practical experience, and impactful contributions in the field of semiconductor research. Her focus on III-V semiconductor chemical treatment and GaN laser diode development positions her as a leading figure in advancing optoelectronic technologies.

Education and Experience:

PhD (Inorg. Chem.) (2014-2019)
- V. Lashkaryov ISP NASU, Kyiv, Ukraine.
- Dissertation: “Interaction between InAs, InSb, GaAs, GaSb and (NH4)2Cr2O7−HBr−solvent aqueous solutions.”
MSc/BSc (Chem.) (2009-2014)
- Zhytomyr I. Franko State University, Zhytomyr, Ukraine.
- Master’s Thesis: “Interaction between phosphonium salts and cholesteryl chloroformiate in a two-phase system.”
Work History:
- SPE “Electrogasochem,” Zhytomyr, Ukraine (2013-2014); Chemist-Engineer.
- V. Lashkaryov ISP NAS, Kyiv, Ukraine (2017-2019); Junior Research Assistant.
- IP PAS, Warsaw, Poland (2017-2019); Laboratory Assistant.
- IHPP PAS, Warsaw, Poland (2019-Present); Research Assistant.
- ENSEMBLE3 LLC, Warsaw, Poland (07.2022-03.2023); Laboratory Assistant.

Professional Development

Iryna Levchenko continuously enhances her professional skills through active engagement in cutting-edge research in semiconductor technology and optoelectronics. With cleanroom experience and proficiency in various fabrication techniques, such as photolithography and chemical etching, she effectively contributes to the development of advanced materials. Her commitment to learning is evident in her collaboration with esteemed professionals and her involvement in numerous research projects, leading to 17 published articles in reputable journals. Iryna’s analytical skills and creative thinking enable her to tackle complex challenges, making her a valuable asset to any research team.

Research Focus

Dr.Iryna Levchenko’s research primarily focuses on III-V semiconductors, particularly in the development and characterization of gallium nitride (GaN) laser diodes and their applications. Her work involves the chemical treatment of semiconductor materials, including etching processes that enhance surface properties and improve device performance. Iryna also investigates the optoelectronic properties of various semiconductor compounds, contributing to advancements in laser technology and other electronic devices. Her research plays a vital role in the semiconductor field, bridging the gap between theoretical concepts and practical applications. Iryna’s dedication to innovation is reflected in her collaborative efforts and published findings.

Awards and Honors

Best Research Paper Award (2022) for contributions to GaN laser diode research.
Outstanding Graduate Award (2019) from V. Lashkaryov ISP NASU for academic excellence in doctoral studies.
Scholarship Recipient (2014-2019) for excellence in research during her Ph.D. program.
Young Scientist Award (2018) from the Ukrainian Chemical Society for innovative research contributions.

Publications

Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode (2024)
Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes (2023)
Improvement the InAs, InSb, GaAs and GaSb Surface State by Nanoscale Wet Etching (2022)
Influence of the a-directed off-cut on the opto-electrical properties of laser diodes grown on the 0.3° misoriented m-directed GaN substrate (2022)
Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching (2022)
Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry (2021)

Conclusion

Given her academic qualifications, extensive research experience, and significant contributions to the field of semiconductor technology, Iryna Levchenko stands out as a deserving candidate for the Best Researcher Award. Her dedication to advancing knowledge in optoelectronics, combined with her innovative spirit and collaborative nature, highlights her potential to make further impactful contributions in the future.