Mahitosh Biswas | Materials | Best Researcher Award

Dr. Mahitosh Biswas , Universität Würzburg, Germany

Dr. Mahitosh Biswas is a postdoctoral researcher at the Centre for Nanoscience and Nanotechnology (C2N), Université Paris-Saclay, specializing in advanced materials science. Born on March 5, 1990, in India, he has extensive experience in hybrid oxide molecular beam epitaxy (MBE) and the development of functional oxide materials for energy storage applications. His research includes the fabrication of ferroelectric-dielectric integrated capacitors and the integration of oxide and III-nitride semiconductors. Dr. Biswas’s innovative work contributes significantly to the fields of optoelectronics and energy-efficient technologies.

Publication Profile

Orcid

Suitability For The Award

Mahitosh Biswas is a highly qualified candidate for the Best Researcher Award, with a robust background in nanoscience and materials engineering. His research encompasses a range of advanced topics, particularly in molecular beam epitaxy and the development of functional oxide materials, positioning him as a leader in his field.

Education and Experience:

Ph.D. in Nanotechnology and Science – Indian Institute of Technology Bombay, India (2014-2017)
Research Associate-I (Electrical Engineering) – Indian Institute of Technology Bombay, India (04.2017 – 08.2018)
Postdoctoral Research Associate – University of Southern California, USA (08.2018 – 07.2019)
Postdoctoral Research Fellow – University of Michigan, USA (08.2019 – 08.2020)
Temporary Research Associate-III (Electrical Engineering) – IIT Bombay, India (03.2021 – 09.2021)
Postdoctoral Researcher (Physics and Astronomy) – University of Würzburg, Germany (10.2021 – 09.2023)
FTC Scientist (Materials Science) – C2N/CNRS, Université Paris-Saclay, France (04.2024 – ongoing)

Professional Development

Dr. Mahitosh Biswas is committed to continuous professional development, focusing on cutting-edge research in materials science. His experiences span various institutions worldwide, where he has honed his skills in molecular beam epitaxy and advanced materials fabrication. Through supervising Ph.D. students and collaborating on significant research projects, he actively contributes to the academic community. His involvement in the ERC Advanced “CRYPTONIT” grant project underscores his leadership in innovative research initiatives. Dr. Biswas is dedicated to bridging the gap between theoretical knowledge and practical applications in materials engineering.

Research Focus

Dr. Mahitosh Biswas’s research primarily focuses on hybrid oxide molecular beam epitaxy (MBE) and the development of atomically engineered quantum materials. His work includes investigating the fundamental properties of ferroelectric complex perovskites and their integration into high-efficiency energy storage devices. He also explores the design and characterization of nanostructures and heterostructures for optoelectronic applications, including photodetectors and LEDs. His innovative research significantly advances the fields of piezoelectricity and ferroelectricity, aiming to enhance performance in flexible electronics and high-power devices.

Awards and Honors

ERC Advanced Grant – “CRYPTONIT” (ongoing)
Recognition for Contributions – Numerous collaborations and research publications
Ph.D. Scholar – Indian Institute of Technology Bombay (2014-2017)

Publications

Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate – Cited by 0 (2024)
Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications – Cited by 11 (2022)
Effects of rapid thermal annealing in InGaN/GaN quantum disk-in-GaN nanowire arrays – Cited by 10 (2020)
Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect – Cited by 8 (2020)
Growth of high quality (In,Ga)N films on O-face ZnO substrates by plasma-assisted molecular beam epitaxy – Cited by 5 (2020)
Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H⁻ ion implantation and UV ozone treatment – Cited by 1 (2019)

Conclusion

Mahitosh Biswas’s extensive research experience, innovative contributions to nanotechnology, and commitment to academic excellence make him an outstanding candidate for the Best Researcher Award. His work not only advances scientific knowledge but also has significant implications for industry and technology, affirming his deservingness of this recognition.