Ms. Mizuki Takahashi , Meijo University , Japan
Takahashi Mizuki is currently a dedicated graduate student at Meijo University, specializing in Materials Engineering with a focus on Semiconductor Engineering. She completed her Master’s degree with distinction, showcasing a strong academic background and a passion for research. Mizuki has achieved significant recognition for her contributions to the field, including winning the Poster Award at the 22nd International Conference on Nanoimprint and Nanoprint Technology (NNT2022) and the Outstanding Poster Award at the 14th International Conference of Nitride Semiconductors (ICNS-14). Her research has been presented at multiple prestigious academic conferences, reflecting her commitment to advancing semiconductor technology. Mizuki’s academic journey is marked by her proactive engagement in research and development, aiming to contribute innovations that enhance semiconductor materials and technologies.
Profile :
Education and Experience:
Takahashi Mizuki is currently pursuing her studies in Materials Engineering at Meijo University, focusing on Semiconductor Engineering. She completed her Master’s degree and has excelled in academic achievements, notably winning the Poster Award at the 22nd International Conference on Nanoimprint and Nanoprint Technology (NNT2022) and the Outstanding Poster Award at the 14th International Conference of Nitride Semiconductors (ICNS-14). Mizuki has presented her research at seven academic conferences, showcasing her commitment to advancing semiconductor technology.
Research and Innovations:
Takahashi Mizuki’s research contributions include active participation in multiple conferences and publications, demonstrating her impact in the field. She has received recognition for her work with awards and has contributed significantly to research and development in semiconductor materials. Mizuki’s academic journey reflects a dedication to innovation and excellence in semiconductor engineering.
Publication Top Notes :
Investigation of emission plane control in GaInN/GaN multiple-quantum shells for efficient nanowire-based LEDs
Optimization of In-Reactor In Situ Activation Annealing Conditions for Tunnel Junction Layers in Multiquantum Shell GaN-Based Devices
Optimization of the Al Composition of the p-AlGaN Electron Blocking Layer in GaInN/GaN Multiquantum-Shell Nanowire LEDs
Performance Enhancement of Multiple Quantum Shell Nanowire-Based Micro-Light Emitting Diodes with Underlying GaInN/GaN Superlattices
Establishment of process to suppress (0001)-plane emission by introducing EBL in GaInN/GaN multi-quantum shells/nanowires for efficient 480nm-LEDs